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PD - 90882F
RADIATION HARDENED POWER MOSFET THRU-HOLE (TO-39)
Product Summary
Part Number Radiation Level IRHF9130 100K Rads (Si) IRHF93130 300K Rads (Si) RDS(on) 0.30 0.30 ID -6.5A -6.5A
IRHF9130 JANSR2N7389 100V, P-CHANNEL REF: MIL-PRF-19500/630
RAD-Hard HEXFET TECHNOLOGY
TM (R)
QPL Part Number JANSR2N7389 JANSF2N7389
International Rectifier's RAD-Hard HEXFETTM technology provides high performance power MOSFETs for space applications. This technology has over a decade of proven performance and reliability in satellite applications. These devices have been characterized for both Total Dose and Single Event Effects (SEE). The combination of low Rds(on) and low gate charge reduces the power losses in switching applications such as DC to DC converters and motor control. These devices retain all of the well established advantages of MOSFETs such as voltage control, fast switching, ease of paralleling and temperature stability of electrical parameters.
TO-39
Features:
n n n n n n n n n
Single Event Effect (SEE) Hardened Low RDS(on) Low Total Gate Charge Proton Tolerant Simple Drive Requirements Ease of Paralleling Hermetically Sealed Ceramic Package Light Weight
Absolute Maximum Ratings
Parameter
ID @ VGS = -12V, TC = 25C ID @ VGS = -12V, TC = 100C IDM PD @ TC = 25C VGS EAS IAR EAR dv/dt TJ T STG Continuous Drain Current Continuous Drain Current Pulsed Drain Current Max. Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Operating Junction Storage Temperature Range Lead Temperature Weight For footnotes refer to the last page -6.5 -4.1 -26 25 0.2 20 165 -6.5 2.5 -22 -55 to 150
Pre-Irradiation
Units A
W
W/C
V mJ A mJ V/ns
o
C
300 ( 0.063 in. (1.6mm) from case for 10s) 0.98 (typical)
g
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1
2/18/03
IRHF9130
Pre-Irradiation
Electrical Characteristics @ Tj = 25C (Unless Otherwise Specified)
Parameter Min Typ Max Units
V V/C V S( ) A
Test Conditions
VGS = 0V, ID =-1.0mA Reference to 25C, ID = -1.0mA VGS = -12V, I D = -4.1A VGS = -12V, ID = -6.5A VDS = VGS, ID = -1.0mA VDS >-15V, IDS = -4.1A VDS= -80V ,VGS=0V VDS = -80V, VGS = 0V, TJ = 125C VGS = -20V VGS = 20V VGS =-12V, ID = -6.5A VDS = -50V VDD = -50V, ID = -6.5A, VGS =-12V, RG = 7.5
BVDSS Drain-to-Source Breakdown Voltage -100 -- -- BV DSS/T J Temperature Coefficient of Breakdown -- -0.112 -- Voltage RDS(on) Static Drain-to-Source On-State -- -- 0.30 Resistance -- -- 0.35 VGS(th) Gate Threshold Voltage -2.0 -- -4.0 g fs Forward Transconductance 2.5 -- -- IDSS Zero Gate Voltage Drain Current -- -- -25 -- -- -250 IGSS IGSS Qg Q gs Q gd td(on) tr td(off) tf LS + LD Gate-to-Source Leakage Forward Gate-to-Source Leakage Reverse Total Gate Charge Gate-to-Source Charge Gate-to-Drain (`Miller') Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Inductance -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- 7.0 -100 100 45 10 25 30 50 70 70 --
nA nC
ns
nH
Measured from drain lead (6mm/0.25in. from package) to source lead (6mm/0.25in. from package)
Ciss C oss C rss
Input Capacitance Output Capacitance Reverse Transfer Capacitance
-- -- --
1200 290 76
-- -- --
pF
VGS = 0V, VDS = -25V f = 1.0MHz
Source-Drain Diode Ratings and Characteristics
Parameter
IS ISM VSD trr Q RR ton Continuous Source Current (Body Diode) Pulse Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Forward Turn-On Time
Min Typ Max Units
-- -- -- -- -- -- -- -- -- -- -6.5 -26 -3.0 250 0.74
Test Conditions
A
V nS C
Tj = 25C, IS = -6.5A, VGS = 0V Tj = 25C, IF = -6.5A, di/dt -100A/s VDD -50V
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.
Thermal Resistance
Parameter
RthJC RthJA Junction-to-Case Junction-to-Ambient
Min Typ Max
-- -- -- -- 5.0 175
Units
C/W
Test Conditions
Typical socket mount
Note: Corresponding Spice and Saber models are available on the G&S Website. For footnotes refer to the last page
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Radiation Characteristics Pre-Irradiation
IRHF9130
International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability. The hardness assurance program at International Rectifier is comprised of two radiation environments. Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-3 package. Both pre- and post-irradiation performance are tested and specified using the same drive circuitry and test conditions in order to provide a direct comparison.
Table 1. Electrical Characteristics @ Tj = 25C, Post Total Dose Irradiation
Parameter
BVDSS VGS(th) IGSS IGSS IDSS RDS(on) RDS(on) VSD Drain-to-Source Breakdown Voltage Gate Threshold Voltage Gate-to-Source Leakage Forward Gate-to-Source Leakage Reverse Zero Gate Voltage Drain Current Static Drain-to-Source On-State Resistance (TO-3) Static Drain-to-Source On-State Resistance (TO-39) Diode Forward Voltage
100K Rads(Si)1 300K Rads (Si)2
Units V nA A V
Test Conditions
VGS = 0V, ID = -1.0mA VGS = VDS , ID = -1.0mA VGS = -20V VGS = 20 V VDS =-80V, VGS =0V VGS = -12V, ID =-4.1A VGS = -12V, ID =-4.1A VGS = 0V, IS = -6.5A
Min -100 -2.0 -- -- -- -- -- --
Max -- -4.0 -100 100 -25 0.30 0.30 -3.0
Min -100 -2.0 -- -- -- -- -- --
Max -- -5.0 -100 100 -25 0.30 0.30 -3.0
1. Part number IRHF9130 (JANSR2N7389) 2. Part number IRHF93130 (JANSF2N7389)
International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2.
Table 2. Single Event Effect Safe Operating Area
Ion LE T MeV/(mg/cm)) 28 36.8 59.9 Energy (MeV) 285 305 345 Range (m) @VGS=0V Cu Br I 43 39 32.8 -100 -100 -60 @VGS=5V -100 -100 -- VD S(V) @VGS=10V -100 -70 -- @VGS=15V -70 -50 -- @VGS=20V -60 -40 --
-120 -100 -80 VDS -60 -40 -20 0 0 5 10 VGS 15 20 Cu Br I
Fig a. Single Event Effect, Safe Operating Area
For footnotes refer to the last page
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IRHF9130
Pre-Irradiation
100
-I D , Drain-to-Source Current (A)
10
-I D , Drain-to-Source Current (A)
VGS -15V -12V -10V -9.0V -8.0V -7.0V -6.0V BOTTOM -5.0V TOP
100
VGS -15V -12V -10V -9.0V -8.0V -7.0V -6.0V BOTTOM -5.0V TOP
-5.0V
10
-5.0V
1 1
20s PULSE WIDTH T = 25 C
J 10 100
1 1
20s PULSE WIDTH T = 150 C
J 10 100
-VDS , Drain-to-Source Voltage (V)
-VDS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
100
2.5
R DS(on) , Drain-to-Source On Resistance (Normalized)
ID = -6.5A
-I D , Drain-to-Source Current (A)
2.0
TJ = 25 C TJ = 150 C
10
1.5
1.0
0.5
1 5 6 7
V DS = -50V 20s PULSE WIDTH 8 9 10
0.0 -60 -40 -20
VGS = -12V
0 20 40 60 80 100 120 140 160
-VGS , Gate-to-Source Voltage (V)
TJ , Junction Temperature ( C)
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance Vs.Temperature
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Pre-Irradiation
IRHF9130
2000
-VGS , Gate-to-Source Voltage (V)
C, Capacitance (pF)
1500
VGS = 0V, f = 1MHz Ciss = Cgs + Cgd , Cds SHORTED Crss = Cgd Coss = Cds + Cgd
20
ID = -6.5
16
Ciss
VDS =-80V VDS =-50V VDS =-20V
12
1000
8
C oss
500
4
C rss
0 1 10 100
0 0 10 20
FOR TEST CIRCUIT SEE FIGURE 13
30 40 50 60
-VDS , Drain-to-Source Voltage (V)
QG , Total Gate Charge (nC)
Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage
Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage
100
100
-ISD , Reverse Drain Current (A)
OPERATION IN THIS AREA LIMITED BY R
DS(on)
10
TJ = 150 C
-ID , Drain Current (A) I
100us
10
1
TJ = 25 C V GS = 0 V
1.0 1.8 2.6 3.4 4.2
1ms
0.1 0.2
1
TC = 25 C TJ = 150 C Single Pulse
1 10
10ms
100 1000
-VSD ,Source-to-Drain Voltage (V)
-VDS , Drain-to-Source Voltage (V)
Fig 7. Typical Source-Drain Diode Forward Voltage
Fig 8. Maximum Safe Operating Area
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5
IRHF9130
Pre-Irradiation
7.0
VDS VGS RG
RD
6.0
D.U.T.
+
-I D , Drain Current (A)
5.0
4.0
VGS Pulse Width 1 s Duty Factor 0.1 %
3.0
Fig 10a. Switching Time Test Circuit
2.0
td(on) tr t d(off) tf
1.0
VGS 10%
0.0 25 50 75 100 125 150
TC , Case Temperature ( C)
90% VDS
Fig 9. Maximum Drain Current Vs. CaseTemperature
Fig 10b. Switching Time Waveforms
10
Thermal Response (Z thJC )
0.50 0.20 0.10 0.05 0.02 0.1 0.01 SINGLE PULSE (THERMAL RESPONSE)
1
0.01 0.00001
Notes: 1. Duty factor D = t 1 / t 2 2. Peak T J = P DM x Z thJC + TC 0.1 1 0.01 10
P DM t1 t2
0.0001
0.001
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
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-
V DD
Pre-Irradiation
IRHF9130
VDS
L
400
EAS , Single Pulse Avalanche Energy (mJ)
RG
D .U .T IA S D R IV E R
0 .0 1
VD D A
-2 0 V VGS
300
ID -2.9A -4.1A BOTTOM -6.5A TOP
tp
200
15V
Fig 12a. Unclamped Inductive Test Circuit
100
IAS
0 25 50 75 100 125 150
Starting TJ , Junction Temperature ( C)
Fig 12c. Maximum Avalanche Energy Vs. Drain Current
tp V (BR)DSS
Fig 12b. Unclamped Inductive Waveforms
Current Regulator Same Type as D.U.T.
50K
QG
-12V 12V
.2F .3F
-12V
QGS VG QGD
VGS
-3mA
Charge
IG
ID
Current Sampling Resistors
Fig 13a. Basic Gate Charge Waveform
Fig 13b. Gate Charge Test Circuit
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+
D.U.T.
-
VDS
7
IRHF9130
Pre-Irradiation
Pulse width 300 s; Duty Cycle 2% Total Dose Irradiation with VGS Bias.
-12 volt VGS applied and VDS = 0 during irradiation per MIL-STD-750, method 1019, condition A. Total Dose Irradiation with VDS Bias. -80 volt VDS applied and VGS = 0 during irradiation per MlL-STD-750, method 1019, condition A.
Foot Notes:
Repetitive Rating; Pulse width limited by
maximum junction temperature. VDD = -25V, starting TJ = 25C, L=7.8mH Peak I L = -6.5A, VGS =-12V ISD -6.5A, di/dt -430A/s, VDD -100V, TJ 150C
Case Outline and Dimensions -- TO-205AF(Modified TO-39)
LEGEND 1- SOURCE 2- GATE 3- DRAIN
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information. Data and specifications subject to change without notice. 02/03
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